powerdi is a registered tr ademark of diodes incorporated. dm p2002u ps document number: ds 37192 rev. 4 - 2 1 of 7 www.diodes.com april 2015 ? diodes incorporated dm p2002u ps 20v p - channel enhancement mode mosfet powerdi ? product summary v (br)dss r ds(on) i d t c = + 25c - 20 v 1.9 m? @ v gs = - 10 v - 60a 2.4 m? @ v gs = - 4.5 v - 60a 3. 8 m? @ v gs = - 2.5 v - 60a description this new generation p - channel enhancement mode mosfet is designed to minimize r ds( on ) and yet maintain superior switching performance. this device is ideal for use in n oteboo k battery power management and l oad switch. applications ? switch features ? thermally efficient package - cooler running applications ? high conversion efficiency ? low r ds( on ) C minimizes on state losses ? <1.1mm package profile C ideal for t hin applications ? lead - free finish; rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note ? qualified to aec - q101 standards for high reliability mechanical data ? case: p ower di5060 - 8 ? case material: molded plastic, green molding compound ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal finish - matte tin a nnealed over copper leadframe ; solderable per mil - std - 202, method 208 ? weight: 0.097 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm p2 00 2 u ps - 13 p ower di5060 - 8 2 , 500 / tape & reel note s: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu ( rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http//www.diodes.com/products/packages.h tml . marking information bottom view t op view pin configuration top view internal schematic p ower di5060 - 8 pin1 s d d g d d s s p2 00 2u s s s s g d d d d yy ww =manufacturer d s g green
powerdi is a registered tr ademark of diodes incorporated. dm p2002u ps document number: ds 37192 rev. 4 - 2 2 of 7 www.diodes.com april 2015 ? diodes incorporated dm p2002u ps maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss - 20 v gate - source voltage v gss 12 v continuous drain current , v gs = 10 v (note 5 ) steady state (note 8 ) t c = +25c t c = + 7 0c i d - 60 - 60 a t<10s t a = +25c t a = + 7 0c - 42 - 33.5 a pulsed drain curren t ( 10 dm - 100 a continuous body diode f orward current (note 5 ) steady state (note 8 ) t c = +25c i s - 60 a t<10s t a = +25c - 5.6 a avalanche current , l = 0. 1mh i as - 37 a avalanche energy , l = 0. 1mh e as 69.8 mj thermal characteristics characteristic symbol value units total power dissipation (note 5 ) s teady s tate p d 2.3 w t<10s 6.25 thermal resistance, junction to ambient (note 5 ) s teady s tate r ja 55 c/w t<10s 20 total power dissipation (note 5 ) s teady s tate p d 104 w thermal resistance, junction to case (note 5 ) r j c 0.9 c/w operating and storage temperature range t j, t stg - 55 to +1 50 c
powerdi is a registered tr ademark of diodes incorporated. dm p2002u ps document number: ds 37192 rev. 4 - 2 3 of 7 www.diodes.com april 2015 ? diodes incorporated dm p2002u ps electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss - 20 gs = 0v, i d = - 250 a zero gate voltage drain current i dss a v ds = - 20 v, v gs = 0v gate - source leakage i gss gs = ? ds = 0v on characteristics (note 6 ) gate threshold voltage v gs( th ) - 0.5 ds = v gs , i d = - 250 a static drain - source on - resistance r ds (on) ? gs = - 10 v, i d = - 25 a gs = - 4.5 v, i d = - 20 a gs = - 2.5 v, i d = - 15 a dynamic characteristics (note 7 ) input capacitance c iss ds = - 1 0 v, v gs = 0v f = 1 mhz output capacitance c oss rss g 0.9 4.2 6.6 ? ds = 0 v, v gs = 0v , f = 1 mhz total gate charge ( v gs = - 10 v ) q g ? d s = - 1 0 v, i d = - 2 0 a total gate charge ( v gs = - 4.5 v ) q g gs gd d( on ) d d = - 1 0v, v g en = - 4.5 v, r g en = 1 ? d = - 10 a turn - on rise time t r d( off ) f body diode characteristics continuous body diode forward current (note 5 & 8) i s c = +25c pulse diode forward current i sm sd gs = 0v, i s = - 5 a reverse recovery time (note 7) t rr f = - 10 a, di/dt = 10 0a/ s reverse recovery charge (note 7) q rr reverse recovery fall time (note 7) t a reverse recovery raise time (note 7) t b notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with thermal b ias to bottom layer 1inch square copper plate . 6 . short duration pulse test used to minimize self - heating effect. 7 . guaranteed by design. not subject to product testing. 8. package limited. 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) fig ure 1 typical output characteristic v gs = - 1.2v v gs = - 1.3v v gs = - 1.4v v gs = - 2.0v v gs = - 1.5v v gs = - 4.5v 0 5 10 15 20 25 30 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 i d , drain current (a) v gs , gate - source voltage (v) figure 2 typical transfer characteristic v ds = - 5 v - 55 o c 25 o c 85 o c 125 o c 150 o c
powerdi is a registered tr ademark of diodes incorporated. dm p2002u ps document number: ds 37192 rev. 4 - 2 4 of 7 www.diodes.com april 2015 ? diodes incorporated dm p2002u ps 0.0014 0.0016 0.0018 0.002 0.0022 0.0024 2 6 10 14 18 22 26 30 r ds(on) , drain - source on - resistance ( ? ) i d , drain - source current (a) figure 3 typical on - resistance vs. drain current and gate voltage v gs = - 2.5v v gs = - 4.5v v gs = - 10v 0 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.01 0 2 4 6 8 10 12 r ds(on) , drain - source on - resistance ( ? ) v gs , gate - source voltage (v) figure 4 typical transfer characteristic i d = - 25a i d = - 15a i d = - 20a 0.001 0.0012 0.0014 0.0016 0.0018 0.002 0.0022 0.0024 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? ) i d , drain current(a) figure 5 typical on - resistance vs. drain current and temperature v gs = - 4.5v 125 o c 150 o c 85 o c 25 o c - 55 o c 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( ) figure 6 on - resistance variation with temperature v gs = - 4.5v, i d = - 20a v gs = - 2.5v, i d = - 15a v gs = - 10v, i d = - 25a 0.001 0.0014 0.0018 0.0022 0.0026 0.003 0.0034 -50 -25 0 25 50 75 100 125 150 r ds(on) , drain - source on - esistance ( ? ) t j , junction temperature ( ) figure 7 on - resistance variation with temperature v gs = - 10v, i d = - 25a v gs = - 4.5v, i d = - 20a v gs = - 2.5v, i d = - 15a 0 0.2 0.4 0.6 0.8 1 -50 -25 0 25 50 75 100 125 150 v gs(th) , gate theshold voltage (v) t a , ambient temperature ( ) figure 8 gate theshold variation vs ambient temperature i d = - 1ma i d = - 250 a
powerdi is a registered tr ademark of diodes incorporated. dm p2002u ps document number: ds 37192 rev. 4 - 2 5 of 7 www.diodes.com april 2015 ? diodes incorporated dm p2002u ps 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 i s , source current (a) v sd , source - drain voltage (v) figure 9 diode forward voltage vs. current t a = 85 o c t a = - 55 o c t a = 25 o c t a = 125 o c t a = 150 o c v gs = 0 v 1000 10000 100000 0 4 8 12 16 20 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10 typical junction capacitance f = 1mhz c iss c oss c rss 0 2 4 6 8 10 0 50 100 150 200 250 300 350 400 450 500 v gs (v) qg (nc) figure 11 gate charge v ds = - 10v, i d = - 20a 1 10 100 1000 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12 soa, safe operation area t j(max) =150 t c =25 v gs =10v single pulse dut on infinite heatsink r ds(on) limited p w =1s p w =100ms p w =10ms p w =1ms p w =100 s p w =10 s p w =1 s 0.001 0.01 0.1 1 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13 transient thermal resistance r jc (t)=r(t) * r jc r jc =0.9 o c/w duty cycle, d=t1/t2 d = single pulse d = 0.005 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.3 d = 0.5 d = 0.7 d = 0.9
powerdi is a registered tr ademark of diodes incorporated. dm p2002u ps document number: ds 37192 rev. 4 - 2 6 of 7 www.diodes.com april 2015 ? diodes incorporated dm p2002u ps package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. powerdi5060 - 8 (type k) dim min max typ a 0. 90 1.10 1.00 a1 0 0.05 0.02 b 0. 33 0. 51 0. 41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 d 5.15 bsc d1 4.85 4.95 4.90 d2 - - 3.98 e 6.15 bsc e1 5.75 5.85 5.80 e2 3.56 3.76 3.66 e 1.27bsc k - - 1.27 l 0. 51 0. 71 0. 61 la 0. 51 0. 71 0. 61 l1 0.05 0.20 0.175 l4 - - 0.125 m 3.50 3.71 3.605 x - - 1.400 y - - 1.900 10 12 11 1 6 8 7 all dimensions in mm dimensions value (in mm) c 1.270 g 0.660 g1 0.820 x 0.610 x1 3.910 x2 4.420 y 1.270 y1 1.020 y2 3.810 y3 6.610 detail a 0(4x) seating plane a1 c e 01(4x) d1 e1 d e 1 y x c ?1.000 depth 0.070.030 a detail a l k m l1 la e2 b(8x) e/2 1 b1(8x) b2(2x) d2 l4 y y3 y2 x1 y1 g1 x2 c x (8x) g
powerdi is a registered tr ademark of diodes incorporated. dm p2002u ps document number: ds 37192 rev. 4 - 2 7 of 7 www.diodes.com april 2015 ? diodes incorporated dm p2002u ps important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, internatio nal or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support di odes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reason ably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affe ct its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regul atory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provide d by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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